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Cu:InP/ZnSeS

Core/shell QDs

Description -

近紅外光油溶性無鎘量子點Cu:InP/ZnSeS core/shell QDs，是以Cu摻雜InP為核，梯度合金ZnSeS為殼，表面疏水性的配位子，平均粒徑為11.5 nm，適合應用在光學通訊、感測器、LED光轉換、生物成像及其他元件應用。

可提供粉體或溶於甲苯溶液，現有包裝有10-1000mg，如需更大包裝，歡迎來信討論。

InP product
Specificaitons-
Product
PL Emission (nm)
FWHM (nm)
Quantum Yield (%)
Surface Ligands
CE810
810 ± 15
<200nm
>50
Oleic acid/Thiol
CE850
850 ± 15
<200nm
>40
Oleic acid/Thiol
CE890
890 ± 15
<200nm
>40
Oleic acid/Thiol
References -

  1.  C-J Chen, K-A Chen, T-H Chiang, C-T Yang, Y-C Yang, H-C Yu*, and R-K Chiang*  "Synthesis of Cu:InP/ZnSe/ZnS Quantum Dots and Their Application in NIR Color Converter Photoresists" SID Symposium Digest of Technical Papers

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