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InP/ZnSeS

Core/shell QDs

Description -

油溶性無鎘量子點，是以InP為核，梯度合金ZnSeS為殼，表面疏水性的配位子(如油酸、硫醇)，平均粒徑為5至8 nm，適合應用在顯示器、生醫標定、QD-LED、QDCF、QDfilm、micro LED等應用。可提供粉體或溶於甲苯溶液，現有包裝有10, 50, 100, 500與 1000 mg。

InP-E2.png
Specificaitons-
Product
PL λ (nm)
FWHM (nm)
Quantum Yield (%)
Surface Ligands
E520
520 ± 3
<50nm
>70
Oleic acid/Thiol
E530
530 ± 3
<50nm
>70
Oleic acid/Thiol
E600
600 ± 3
<50nm
>70
Oleic acid/Thiol
E610
610 ± 3
<50nm
>70
Oleic acid/Thiol
E620
620 ± 3
<50nm
>60
Oleic acid/Thiol
E690
690 ± 5
<70nm
>40
Oleic acid/Thiol
References -

  1.  C-J Chen, K-A Chen, T-H Chiang, C-T Yang, Y-C Yang, H-C Yu*, and R-K Chiang*  "Synthesis of Cu:InP/ZnSe/ZnS Quantum Dots and Their Application in NIR Color Converter Photoresists" SID Symposium Digest of Technical Papers

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